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STMicroelectronicsTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS

STQ3N45K3-AP

Name: STQ3N45K3-AP
Brand: STMicroelectronics
SKU: STQ3N45K3-AP
Price: 0.76 USD
Availability: InStock

MOSFET N-CH 450V 600MA TO92-3

Parameters

Parameter	Value
Brand	STMicroelectronics
Model	STQ3N45K3-AP
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	450 V
Rds On (Max)	3.8Ohm @ 500mA, 10V
Vgs(th) (Max)	4.5V @ 50µA
Gate Charge (Qg)	6 nC @ 10 V
Input Capacitance (Ciss)	150 pF @ 25 V
Power Dissipation (Max)	3W (Tc)
Drive Voltage	10V
Supplier Device Package	TO-92-3
RoHS	RoHS
Part Status	Obsolete

Application & Notes

STQ3N45K3-AP by STMicroelectronics is an N-channel power MOSFET rated at 450 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.8Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5V @ 50µA
Rds On (Max) @ Id, Vgs	3.8Ohm @ 500mA, 10V
Power Dissipation (Max)	3W (Tc)
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Drain to Source Voltage (Vdss)	450 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	600mA (Tc)

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