NTE Electronics, IncTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS
2N7000
MOSFET N-CHANNEL 60V 200MA TO92
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Status
Active
$0.40 / unit (market reference)
MOQ: 5 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | 2N7000 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Input Capacitance (Ciss) | 60 pF @ 25 V |
| Supplier Device Package | TO-92 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2N7000 by NTE Electronics, Inc is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
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