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Toshiba Semiconductor and Storage6-WDFN Exposed PadRoHS

SSM6P49NU,LF

MOSFET 2P-CH 20V 4A 2-1Y1A

SSM6P49NU,LF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

6-WDFN Exposed Pad

Status

Active

$0.46 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6P49NU,LF
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET Type2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)45mOhm @ 3.5A, 10V
Vgs(th) (Max)1.2V @ 1mA
Gate Charge (Qg)6.74nC @ 4.5V
Input Capacitance (Ciss)480pF @ 10V
Power Dissipation (Max)1W
Supplier Device Package6-UDFN (2x2)
RoHSRoHS
Part StatusActive

Application & Notes

SSM6P49NU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 3.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max1W
Vgs(th) (Max) @ Id1.2V @ 1mA
Rds On (Max) @ Id, Vgs45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs6.74nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 10V
Current - Continuous Drain (Id) @ 25°C4A

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