SSM6N58NU,LF
MOSFET 2N-CH 30V 4A UDFN6
Transistors Fets Mosfets Arrays
6-WDFN Exposed Pad
Active
$0.48 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6N58NU,LF |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 84mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 1.8nC @ 4.5V |
| Input Capacitance (Ciss) | 129pF @ 15V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | 6-UDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6N58NU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 84mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6N58NU,LF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 129pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
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