SSM6P41FE(TE85L,F)
MOSFET 2P-CH 20V 0.72A ES6
Transistors Fets Mosfets Arrays
SOT-563, SOT-666
Active
$0.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6P41FE(TE85L,F) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 300mOhm @ 400mA, 4.5V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 1.76nC @ 4.5V |
| Input Capacitance (Ciss) | 110pF @ 10V |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | ES6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6P41FE(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 400mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6P41FE(TE85L,F)
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 150mW |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 400mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.76nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 720mA |
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