onsemiSOT-563, SOT-666RoHS
NTZD3152PT1H
MOSFET 2P-CH 20V 430MA SOT563-6
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-563, SOT-666
Status
Obsolete
$0.08 / unit (market reference)
MOQ: 3606 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTZD3152PT1H |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 900mOhm @ 430mA, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) | 175pF @ 16V |
| Power Dissipation (Max) | 250mW |
| Supplier Device Package | SOT-563 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTZD3152PT1H by onsemi is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 900mOhm @ 430mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 250mW |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 430mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 430mA |
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