FDMC6890NZ
POWER FIELD-EFFECT TRANSISTOR, 4
Transistors Fets Mosfets Arrays
6-WDFN Exposed Pad
PowerTrench®
Active
$0.39 / unit (market reference)
MOQ: 766 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMC6890NZ |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 68mOhm @ 4A, 4.5V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 3.4nC @ 4.5V |
| Input Capacitance (Ciss) | 270pF @ 10V |
| Power Dissipation (Max) | 1.92W, 1.78W |
| Supplier Device Package | MicroFET 3x3mm |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMC6890NZ by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 68mOhm @ 4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMC6890NZ
Alternatives & Replacements
View All →NTLJD3183CZTBG
MOSFET N/P-CH 20V 6WDFN
NTLJD3181PZTAG
MOSFET 2P-CH 20V 2.2A 6WDFN
NTLJD2105LTBG
MOSFET N/P-CH 8V 2.5A 6-WDFN
CSD87502Q2T
MOSFET 2N-CH 30V 5A 6WSON
SSM6N58NU,LF
MOSFET 2N-CH 30V 4A UDFN6
NTLJD2104PTAG
MOSFET 2P-CH 12V 2.4A 6WDFN
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.92W, 1.78W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
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