Toshiba Semiconductor and Storage6-TSSOP, SC-88, SOT-363RoHS
SSM6N16FUTE85LF
MOSFET 2N-CH 20V 0.1A US6
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-TSSOP, SC-88, SOT-363
Status
Active
$0.52 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6N16FUTE85LF |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 3Ohm @ 10mA, 4V |
| Vgs(th) (Max) | 1.1V @ 100µA |
| Input Capacitance (Ciss) | 9.3pF @ 3V |
| Power Dissipation (Max) | 200mW |
| Supplier Device Package | US6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6N16FUTE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3Ohm @ 10mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 200mW |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
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