PC
Rochester Electronics, LLC6-TSSOP, SC-88, SOT-363RoHS

FDG6302P

SMALL SIGNAL P-CHANNEL MOSFET

FDG6302P by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Arrays

Package

6-TSSOP, SC-88, SOT-363

Status

Obsolete

$0.23 / unit (market reference)

MOQ: 1312 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDG6302P
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 P-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Rds On (Max)10Ohm @ 140mA, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)0.31nC @ 4.5V
Input Capacitance (Ciss)12pF @ 10V
Power Dissipation (Max)300mW
Supplier Device PackageSC-88 (SC-70-6)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDG6302P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10Ohm @ 140mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max300mW
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs10Ohm @ 140mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.31nC @ 4.5V
Drain to Source Voltage (Vdss)25V
Input Capacitance (Ciss) (Max) @ Vds12pF @ 10V
Current - Continuous Drain (Id) @ 25°C140mA

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