PC
Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS

SSM6L56FE,LM

SMALL-SIGNAL MOSFET 2 IN 1 NCH +

SSM6L56FE,LM by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-563, SOT-666

Status

Active

$0.39 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6L56FE,LM
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Rds On (Max)235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)1nC @ 10V
Input Capacitance (Ciss)55pF @ 10V, 100pF @ 10V
Power Dissipation (Max)150mW (Ta)
Supplier Device PackageES6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6L56FE,LM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureLogic Level Gate, 1.5V Drive
Power - Max150mW (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1nC @ 10V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds55pF @ 10V, 100pF @ 10V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.