Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS
SSM6L16FETE85LF
MOSFET N/P-CH 20V 0.18A/0.1A ES6
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-563, SOT-666
Status
Not For New Designs
$0.40 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6L16FETE85LF |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TA) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 3Ohm @ 10mA, 4V |
| Vgs(th) (Max) | 1.1V @ 0.1mA |
| Input Capacitance (Ciss) | 9.3pF @ 3V |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | ES6 (1.6x1.6) |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
SSM6L16FETE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3Ohm @ 10mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 150mW |
| Vgs(th) (Max) @ Id | 1.1V @ 0.1mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
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