PC
Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS

SSM6L14FE(TE85L,F)

X34 PB-F SMALL LOW ON RESISTANCE

SSM6L14FE(TE85L,F) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-563, SOT-666

Status

Active

$0.45 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6L14FE(TE85L,F)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Rds On (Max)240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss)90pF @ 10V, 110pF @ 10V
Power Dissipation (Max)150mW (Ta)
Supplier Device PackageES6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6L14FE(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureLogic Level Gate, 1.5V Drive
Power - Max150mW (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V, 1.76nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 10V, 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C800mA (Ta), 720mA (Ta)

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