SSM5H16TU,LF
MOSFET N-CH 30V 1.9A UFV
Transistors Fets Mosfets Single
6-SMD (5 Leads), Flat Lead
U-MOSIII
Active
$0.50 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM5H16TU,LF |
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 133mOhm @ 1A, 4V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 1.9 nC @ 4 V |
| Input Capacitance (Ciss) | 123 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 1.8V, 4V |
| Supplier Device Package | UFV |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM5H16TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD (5 Leads), Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 133mOhm @ 1A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM5H16TU,LF
Alternatives & Replacements
View All →MCH5837-TL-E
MOSFET N-CH 20V 2A 5MCPH
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US5U3TR
MOSFET N-CH 30V 1.5A TUMT5
SSM5G10TU(TE85L,F)
MOSFET P-CH 20V 1.5A UFV
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 133mOhm @ 1A, 4V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
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