SSM5G10TU(TE85L,F)
MOSFET P-CH 20V 1.5A UFV
Transistors Fets Mosfets Single
6-SMD (5 Leads), Flat Lead
U-MOSIII
Obsolete
$0.36 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM5G10TU(TE85L,F) |
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 213mOhm @ 1A, 4V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 6.4 nC @ 4 V |
| Input Capacitance (Ciss) | 250 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 1.8V, 4V |
| Supplier Device Package | UFV |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SSM5G10TU(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD (5 Leads), Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 213mOhm @ 1A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM5G10TU(TE85L,F)
Alternatives & Replacements
View All →MCH5837-TL-E
MOSFET N-CH 20V 2A 5MCPH
SSM5H08TU,LF
MOSFET N-CH 20V 1.5A UFV
SSM5H16TU,LF
MOSFET N-CH 30V 1.9A UFV
US5U3TR
MOSFET N-CH 30V 1.5A TUMT5
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
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