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Toshiba Semiconductor and Storage6-SMD (5 Leads), Flat LeadRoHS

SSM5H08TU,LF

MOSFET N-CH 20V 1.5A UFV

SSM5H08TU,LF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

6-SMD (5 Leads), Flat Lead

Series

U-MOSIII

Status

Active

$0.50 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM5H08TU,LF
Package / Case6-SMD (5 Leads), Flat Lead
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)160mOhm @ 750mA, 4V
Vgs(th) (Max)1.1V @ 100µA
Input Capacitance (Ciss)125 pF @ 10 V
Power Dissipation (Max)500mW (Ta)
Drive Voltage2.5V, 4V
Supplier Device PackageUFV
RoHSRoHS
Part StatusActive

Application & Notes

SSM5H08TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD (5 Leads), Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 160mOhm @ 750mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
FET FeatureSchottky Diode (Isolated)
Vgs(th) (Max) @ Id1.1V @ 100µA
Rds On (Max) @ Id, Vgs160mOhm @ 750mA, 4V
Power Dissipation (Max)500mW (Ta)
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds125 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)

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