SQUN702E-T1_GE3
MOSFET N&P-CH COMMON DRAIN
Transistors Fets Mosfets Arrays
Die
Automotive, AEC-Q101, TrenchFET®
Active
$3.46 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SQUN702E-T1_GE3 |
| Package / Case | Die |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N and P-Channel, Common Drain |
| Drain to Source Voltage (Vdss) | 40V, 200V |
| Rds On (Max) | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA, 3.5V @ 250µA |
| Gate Charge (Qg) | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V |
| Input Capacitance (Ciss) | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V |
| Power Dissipation (Max) | 48W (Tc), 60W (Tc) |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SQUN702E-T1_GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 40V, 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SQUN702E-T1_GE3
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All Technical Specifications
| FET Type | N and P-Channel, Common Drain |
| FET Feature | Standard |
| Power - Max | 48W (Tc), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V |
| Drain to Source Voltage (Vdss) | 40V, 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc), 20A (Tc) |
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