EPC2106
GANFET TRANS SYM 100V BUMPED DIE
Transistors Fets Mosfets Arrays
Die
eGaN®
Active
$1.82 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | EPC |
| Model | EPC2106 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 70mOhm @ 2A, 5V |
| Vgs(th) (Max) | 2.5V @ 600µA |
| Gate Charge (Qg) | 0.73nC @ 5V |
| Input Capacitance (Ciss) | 75pF @ 50V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
EPC2106 by EPC is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 70mOhm @ 2A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for EPC2106
Alternatives & Replacements
View All →EPC2111
GAN TRANS ASYMMETRICAL HALF BRID
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC2103
GAN TRANS SYMMETRICAL HALF BRIDG
EPC2105
GAN TRANS ASYMMETRICAL HALF BRID
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
EPC2104
GAN TRANS SYMMETRICAL HALF BRIDG
All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 600µA |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 5V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
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