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Vishay Siliconix8-SOIC (0.154", 3.90mm Width)RoHS

SQ4284EY-T1_BE3

MOSFET 2N-CH 40V 8A 8SOIC

Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Series

Automotive, AEC-Q101, TrenchFET®

Status

Active

$1.72 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSQ4284EY-T1_BE3
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)40V
Rds On (Max)13.5mOhm @ 7A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)45nC @ 10V
Input Capacitance (Ciss)2200pF @ 25V
Power Dissipation (Max)3.9W (Tc)
Supplier Device Package8-SOIC
RoHSRoHS
Part StatusActive

Application & Notes

SQ4284EY-T1_BE3 by Vishay Siliconix is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13.5mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max3.9W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Drain to Source Voltage (Vdss)40V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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