MOSFET 2N-CH 35V 4.5A 8SOIC

Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
Obsolete
$0.22 / unit (market reference)
MOQ: 1374 pcs
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| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FW216A-TL-2W |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 35V |
| Rds On (Max) | 64mOhm @ 4.5A, 10V |
| Gate Charge (Qg) | 5.6nC @ 10V |
| Input Capacitance (Ciss) | 280pF @ 10V |
| Power Dissipation (Max) | 2.2W |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
FW216A-TL-2W by onsemi is an N-channel power MOSFET rated at 35V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 64mOhm @ 4.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
POWER FIELD-EFFECT TRANSISTOR, 3
P-CHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
MOSFET 2N-CH 30V 4.5A 8SOIC
MOSFET 2P-CH 30V 3.9A 8SO
6.9A, 30V, 0.021OHM, 2-ELEMENT,
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4V Drive |
| Power - Max | 2.2W |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
| Drain to Source Voltage (Vdss) | 35V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
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