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Vishay Siliconix8-PowerWDFNRoHS

SIZF928DT-T1-GE3

DUAL N-CHANNEL 30 V (D-S) MOSFET

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

TrenchFET® Gen IV

Status

Active

$1.73 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSIZF928DT-T1-GE3
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
Vgs(th) (Max)2V @ 250µA
Power Dissipation (Max)3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Supplier Device Package8-PowerPair® (6x5)
RoHSRoHS
Part StatusActive

Application & Notes

SIZF928DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)

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