FDPC1012S
POWER FIELD-EFFECT TRANSISTOR
Transistors Fets Mosfets Arrays
8-PowerWDFN
Active
$0.40 / unit (market reference)
MOQ: 760 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDPC1012S |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V |
| Vgs(th) (Max) | 2.2V @ 250µA, 2.2V @ 1mA |
| Gate Charge (Qg) | 8nC @ 4.5V, 25nC @ 4.5V |
| Input Capacitance (Ciss) | 1075pF @ 13V, 3456pF @ 13V |
| Power Dissipation (Max) | 800mW (Ta), 900mW (Ta) |
| Supplier Device Package | Powerclip-33 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDPC1012S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDPC1012S
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 800mW (Ta), 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA, 2.2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V, 25nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1075pF @ 13V, 3456pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) |
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