PC
Vishay Siliconix8-PowerWDFNRoHS

SIZF918DT-T1-GE3

MOSFET DUAL N-CH 30V POWERPAIR 6

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

TrenchFET® Gen IV

Status

Active

$0.76 / unit (market reference)

MOQ: 6000 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIZF918DT-T1-GE3
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss)30V
Rds On (Max)4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max)2.4V @ 250µA, 2.3V @ 250µA
Gate Charge (Qg)22nC @ 10V, 56nC @ 10V
Input Capacitance (Ciss)1060pF @ 15V, 2650pF @ 15V
Power Dissipation (Max)3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Supplier Device Package8-PowerPair® (6x5)
RoHSRoHS
Part StatusActive

Application & Notes

SIZF918DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual), Schottky
FET FeatureStandard
Power - Max3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA, 2.3V @ 250µA
Rds On (Max) @ Id, Vgs4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 56nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 15V, 2650pF @ 15V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)

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