SIZF914DT-T1-GE3
DUAL N-CH 25-V (D-S) MOSFET W/SC
Transistors Fets Mosfets Arrays
8-PowerWDFN
PowerPAIR®, TrenchFET®
Active
$0.86 / unit (market reference)
MOQ: 6000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIZF914DT-T1-GE3 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.4V @ 250µA, 2.2V @ 250µA |
| Gate Charge (Qg) | 21nC @ 10V, 98nC @ 10V |
| Input Capacitance (Ciss) | 1050pF @ 10V, 4670pF @ 10V |
| Power Dissipation (Max) | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Supplier Device Package | 8-PowerPair® (6x5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIZF914DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIZF914DT-T1-GE3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V, 98nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 10V, 4670pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) |
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