SIZ998DT-T1-GE3
MOSFET 2 N-CH 30V 8-POWERPAIR
Transistors Fets Mosfets Arrays
8-PowerWDFN
TrenchFET®
Active
$1.62 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIZ998DT-T1-GE3 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual), Schottky |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V |
| Vgs(th) (Max) | 2.2V @ 250µA |
| Gate Charge (Qg) | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
| Input Capacitance (Ciss) | 930pF @ 15V, 2620pF @ 15V |
| Power Dissipation (Max) | 20.2W, 32.9W |
| Supplier Device Package | 8-PowerPair® (6x5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIZ998DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIZ998DT-T1-GE3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Standard |
| Power - Max | 20.2W, 32.9W |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
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