SIZ720DT-T1-GE3
MOSFET 2N-CH 20V 16A POWERPAIR
Transistors Fets Mosfets Arrays
6-PowerPair™
TrenchFET®
Active
$0.72 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIZ720DT-T1-GE3 |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 8.7mOhm @ 16.8A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 23nC @ 10V |
| Input Capacitance (Ciss) | 825pF @ 10V |
| Power Dissipation (Max) | 27W, 48W |
| Supplier Device Package | 6-PowerPair™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIZ720DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerPair™ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.7mOhm @ 16.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIZ720DT-T1-GE3
Alternatives & Replacements
View All →SIZ710DT-T1-GE3
MOSFET 2N-CH 20V 16A POWERPAIR
SIZ730DT-T1-GE3
MOSFET 2N-CH 30V 16A 6-POWERPAIR
SIZ704DT-T1-GE3
MOSFET 2N-CH 30V 12A PPAK 1212-8
SIZF360DT-T1-GE3
MOSFET DL N-CH 30V PPAIR 3X3FDC
All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Power - Max | 27W, 48W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 16.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 825pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.