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Vishay Siliconix6-PowerPair™RoHS

SIZF360DT-T1-GE3

MOSFET DL N-CH 30V PPAIR 3X3FDC

Subcategory

Transistors Fets Mosfets Arrays

Package

6-PowerPair™

Series

TrenchFET® Gen IV

Status

Active

$1.68 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIZF360DT-T1-GE3
Package / Case6-PowerPair™
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss)30V
Rds On (Max)4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max)2.2V @ 250µA
Gate Charge (Qg)22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss)1100pF @ 15V, 3150pF @ 15V
Power Dissipation (Max)3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Supplier Device Package6-PowerPair™
RoHSRoHS
Part StatusActive

Application & Notes

SIZF360DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerPair™ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual), Schottky
FET FeatureStandard
Power - Max3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Rds On (Max) @ Id, Vgs4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 62nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V, 3150pF @ 15V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)

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