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Vishay Siliconix8-PowerWDFNRoHS

SIZ346DT-T1-GE3

MOSFET 2N-CH 30V 17/30A 8POWER33

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

PowerPAIR®, TrenchFET®

Status

Active

$0.76 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSIZ346DT-T1-GE3
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Vgs(th) (Max)2.2V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg)5nC @ 4.5V, 9nC @ 4.5V
Input Capacitance (Ciss)325pF @ 15V, 650pF @ 15V
Power Dissipation (Max)16W, 16.7W
Supplier Device Package8-Power33 (3x3)
RoHSRoHS
Part StatusActive

Application & Notes

SIZ346DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max16W, 16.7W
Vgs(th) (Max) @ Id2.2V @ 250µA, 2.4V @ 250µA
Rds On (Max) @ Id, Vgs28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V, 9nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C17A (Tc), 30A (Tc)

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