Vishay Siliconix8-PowerWDFNRoHS
SIZ342ADT-T1-GE3
MOSFET DL N-CH 30V PPAIR 3 X 3
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerWDFN
Series
TrenchFET® Gen IV
Status
Active
Datasheet
$0.90 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIZ342ADT-T1-GE3 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 9.4mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.4V @ 250µA |
| Gate Charge (Qg) | 12.2nC @ 10V |
| Input Capacitance (Ciss) | 580pF @ 15V |
| Power Dissipation (Max) | 3.7W (Ta), 16.7W (Tc) |
| Supplier Device Package | 8-Power33 (3x3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIZ342ADT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.4mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIZ342ADT-T1-GE3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 3.7W (Ta), 16.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Ta), 33.4A (Tc) |
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