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Vishay Siliconix8-PowerWDFNRoHS

SIZ340ADT-T1-GE3

DUAL N-CHANNEL 30-V (D-S) MOSFET

SIZ340ADT-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

TrenchFET®

Status

Active

$1.16 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSIZ340ADT-T1-GE3
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Vgs(th) (Max)2.4V @ 250µA
Gate Charge (Qg)12.2nC @ 10V, 27.9nC @ 10V
Input Capacitance (Ciss)580pF @ 15V, 1290pF @ 15V
Power Dissipation (Max)3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Supplier Device Package8-Power33 (3x3)
RoHSRoHS
Part StatusActive

Application & Notes

SIZ340ADT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Rds On (Max) @ Id, Vgs9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs12.2nC @ 10V, 27.9nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds580pF @ 15V, 1290pF @ 15V
Current - Continuous Drain (Id) @ 25°C15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)

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