Vishay Siliconix8-PowerWDFNRoHS
SIZ328DT-T1-GE3
MOSFET DUAL N-CHAN 25V POWERPAIR
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerWDFN
Series
TrenchFET® Gen IV
Status
Active
$0.90 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIZ328DT-T1-GE3 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 6.9nC @ 10V, 11.3nC @ 10V |
| Input Capacitance (Ciss) | 325pF @ 10V, 600pF @ 10V |
| Power Dissipation (Max) | 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) |
| Supplier Device Package | 8-Power33 (3x3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIZ328DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9nC @ 10V, 11.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 10V, 600pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) |
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