SIHG47N60AEF-GE3
MOSFET N-CH 600V 40A TO247AC
Transistors Fets Mosfets Single
TO-247-3
EF
Active
$9.16 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIHG47N60AEF-GE3 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 70mOhm @ 23.5A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 189 nC @ 10 V |
| Input Capacitance (Ciss) | 3576 pF @ 100 V |
| Power Dissipation (Max) | 313W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247AC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIHG47N60AEF-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 70mOhm @ 23.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIHG47N60AEF-GE3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 23.5A, 10V |
| Power Dissipation (Max) | 313W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3576 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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