PC
Vishay SiliconixPowerPAK® SO-8RoHS

SI7456CDP-T1-GE3

MOSFET N-CH 100V 27.5A PPAK SO-8

SI7456CDP-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® SO-8

Series

TrenchFET®

Status

Active

$1.75 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandVishay Siliconix
ModelSI7456CDP-T1-GE3
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)23.5mOhm @ 10A, 10V
Vgs(th) (Max)2.8V @ 250µA
Gate Charge (Qg)23 nC @ 10 V
Input Capacitance (Ciss)730 pF @ 50 V
Power Dissipation (Max)5W (Ta), 35.7W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePowerPAK® SO-8
RoHSRoHS
Part StatusActive

Application & Notes

SI7456CDP-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 23.5mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.8V @ 250µA
Rds On (Max) @ Id, Vgs23.5mOhm @ 10A, 10V
Power Dissipation (Max)5W (Ta), 35.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C27.5A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.