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Vishay SiliconixPowerPAK® SO-8RoHS

SIRA58ADP-T1-RE3

MOSFET N-CH 40V 32.3A/109A PPAK

SIRA58ADP-T1-RE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® SO-8

Series

TrenchFET® Gen IV

Status

Active

$1.15 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIRA58ADP-T1-RE3
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)2.65mOhm @ 15A, 10V
Vgs(th) (Max)2.4V @ 250µA
Gate Charge (Qg)61 nC @ 10 V
Input Capacitance (Ciss)3030 pF @ 20 V
Power Dissipation (Max)5W (Ta), 56.8W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePowerPAK® SO-8
RoHSRoHS
Part StatusActive

Application & Notes

SIRA58ADP-T1-RE3 by Vishay Siliconix is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.65mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)+20V, -16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Power Dissipation (Max)5W (Ta), 56.8W (Tc)
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds3030 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C32.3A (Ta), 109A (Tc)

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