PC
Vishay SiliconixSOT-23-6 Thin, TSOT-23-6RoHS

SI3473CDV-T1-E3

MOSFET P-CH 12V 8A 6TSOP

SI3473CDV-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

TrenchFET®

Status

Active

$0.74 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI3473CDV-T1-E3
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)22mOhm @ 8.1A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)65 nC @ 8 V
Input Capacitance (Ciss)2010 pF @ 6 V
Power Dissipation (Max)4.2W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device Package6-TSOP
RoHSRoHS
Part StatusActive

Application & Notes

SI3473CDV-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 8.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs22mOhm @ 8.1A, 4.5V
Power Dissipation (Max)4.2W (Tc)
Gate Charge (Qg) (Max) @ Vgs65 nC @ 8 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds2010 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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