PartsCubeGlobal
Infineon TechnologiesSOT-23-6 Thin, TSOT-23-6RoHS

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

OptiMOS™

Status

Obsolete

$0.17 / unit (market reference)

MOQ: 1731 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandInfineon Technologies
ModelBSL307SPL6327HTSA1
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)43mOhm @ 5.5A, 10V
Vgs(th) (Max)2V @ 40µA
Gate Charge (Qg)29 nC @ 10 V
Input Capacitance (Ciss)805 pF @ 25 V
Power Dissipation (Max)2W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-TSOP6-6
RoHSRoHS
Part StatusObsolete

Application & Notes

BSL307SPL6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 43mOhm @ 5.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

FDC633NRochester Electronics, LLC

MOSFET N-CH 30V 5.2A SUPERSOT6

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 40µA
Rds On (Max) @ Id, Vgs43mOhm @ 5.5A, 10V
Power Dissipation (Max)2W (Ta)
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds805 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.