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Rochester Electronics, LLCSOT-23-6 Thin, TSOT-23-6RoHS

SI3456DV

SMALL SIGNAL N-CHANNEL MOSFET

SI3456DV by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

PowerTrench®

Status

Active

$0.17 / unit (market reference)

MOQ: 1803 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelSI3456DV
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)45mOhm @ 5.1A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)12.6 nC @ 10 V
Input Capacitance (Ciss)463 pF @ 15 V
Power Dissipation (Max)800mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSuperSOT™-6
RoHSRoHS
Part StatusActive

Application & Notes

SI3456DV by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 5.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs45mOhm @ 5.1A, 10V
Power Dissipation (Max)800mW (Ta)
Gate Charge (Qg) (Max) @ Vgs12.6 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds463 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)

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