SH8MA4TB1
SH8MA4TB1 IS LOW ON-RESISTANCE A
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
Active
$1.11 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | SH8MA4TB1 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 15.5nC @ 10V, 19.6nC @ 10V |
| Input Capacitance (Ciss) | 640pF @ 15V, 890pF @ 15V |
| Power Dissipation (Max) | 2W (Ta) |
| Supplier Device Package | 8-SOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SH8MA4TB1 by Rohm Semiconductor is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SH8MA4TB1
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V, 19.6nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 15V, 890pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 8.5A (Ta) |
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