SGS5N60RUFDTU
IGBT, 8A, 600V, N-CHANNEL
Transistors Igbts Single
TO-220-3 Full Pack
Obsolete
$0.37 / unit (market reference)
MOQ: 802 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | SGS5N60RUFDTU |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 35 W |
| Supplier Device Package | TO-220F-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SGS5N60RUFDTU by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGS5N60RUFDTU
Alternatives & Replacements
View All →FGPF70N30
IGBT 300V 52W TO220F
IRG4IBC20UDPBF
IGBT, 11.4A, 600V, N-CHANNEL
SGS13N60UFDTU
IGBT, 13A, 600V, N-CHANNEL
FGPF4536
INSULATED GATE BIPOLAR TRANSISTO
SGS10N60RUFDTU
INSULATED GATE BIPOLAR TRANSISTO
IRG4IBC10UDPBF
IGBT 600V 6.8A 25W TO220FP
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 16 nC |
| Power - Max | 35 W |
| Test Condition | 300V, 5A, 40Ohm, 15V |
| Switching Energy | 88µJ (on), 107µJ (off) |
| Td (on/off) @ 25°C | 13ns/34ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 5A |
| Reverse Recovery Time (trr) | 55 ns |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.