SGS10N60RUFDTU
IGBT 600V 16A TO220F
Transistors Igbts Single
TO-220-3 Full Pack
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | SGS10N60RUFDTU |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 55 W |
| Supplier Device Package | TO-220F-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SGS10N60RUFDTU by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGS10N60RUFDTU
Alternatives & Replacements
View All →FGPF70N30
IGBT 300V 52W TO220F
IRG4IBC20UDPBF
IGBT, 11.4A, 600V, N-CHANNEL
SGS13N60UFDTU
IGBT, 13A, 600V, N-CHANNEL
FGPF4536
INSULATED GATE BIPOLAR TRANSISTO
IRG4IBC10UDPBF
IGBT 600V 6.8A 25W TO220FP
FGPF70N30TTU
IGBT, 300V, N-CHANNEL, TO-220AB
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 30 nC |
| Power - Max | 55 W |
| Test Condition | 300V, 10A, 20Ohm, 15V |
| Switching Energy | 141µJ (on), 215µJ (off) |
| Td (on/off) @ 25°C | 15ns/36ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Reverse Recovery Time (trr) | 60 ns |
| Current - Collector (Ic) (Max) | 16 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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