SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247
Transistors Fets Mosfets Single
TO-247-3
Automotive, AEC-Q101
Active
$35.96 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | SCTW100N65G2AG |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 26mOhm @ 50A, 18V |
| Vgs(th) (Max) | 5V @ 5mA |
| Gate Charge (Qg) | 162 nC @ 18 V |
| Input Capacitance (Ciss) | 3315 pF @ 520 V |
| Power Dissipation (Max) | 420W (Tc) |
| Drive Voltage | 18V |
| Supplier Device Package | HiP247™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SCTW100N65G2AG by STMicroelectronics is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 26mOhm @ 50A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SCTW100N65G2AG
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| Power Dissipation (Max) | 420W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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