SCT2280KEGC11
1200V, 14A, THD, SILICON-CARBIDE
Transistors Fets Mosfets Single
TO-247-3
Active
$7.19 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | SCT2280KEGC11 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 364mOhm @ 4A, 18V |
| Vgs(th) (Max) | 4V @ 1.4mA |
| Gate Charge (Qg) | 36 nC @ 18 V |
| Input Capacitance (Ciss) | 667 pF @ 800 V |
| Power Dissipation (Max) | 108W (Tc) |
| Drive Voltage | 18V |
| Supplier Device Package | TO-247N |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SCT2280KEGC11 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 364mOhm @ 4A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SCT2280KEGC11
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
| Power Dissipation (Max) | 108W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
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