Rohm SemiconductorTO-247-3RoHS
SCT2080KEHRC11
SICFET N-CH 1200V 40A TO247N
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
Automotive, AEC-Q101
Status
Active
Datasheet
$34.82 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | SCT2080KEHRC11 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 117mOhm @ 10A, 18V |
| Vgs(th) (Max) | 4V @ 4.4mA |
| Gate Charge (Qg) | 106 nC @ 18 V |
| Input Capacitance (Ciss) | 2080 pF @ 800 V |
| Drive Voltage | 18V |
| Supplier Device Package | TO-247N |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SCT2080KEHRC11 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 117mOhm @ 10A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SCT2080KEHRC11
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4V @ 4.4mA |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 10A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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