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STMicroelectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

SCT10N120H

SICFET N-CH 1200V 12A H2PAK-2

SCT10N120H by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

$9.44 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSCT10N120H
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 200°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Rds On (Max)690mOhm @ 6A, 20V
Vgs(th) (Max)3.5V @ 250µA
Gate Charge (Qg)22 nC @ 20 V
Input Capacitance (Ciss)290 pF @ 400 V
Power Dissipation (Max)150W (Tc)
Drive Voltage20V
Supplier Device PackageH2Pak-2
RoHSRoHS
Part StatusActive

Application & Notes

SCT10N120H by STMicroelectronics is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 690mOhm @ 6A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for SCT10N120H

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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FDB6035AL

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)+25V, -10V
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id3.5V @ 250µA
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Power Dissipation (Max)150W (Tc)
Gate Charge (Qg) (Max) @ Vgs22 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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