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STMicroelectronicsTO-247-3RoHS

SCT1000N170

HIP247 IN LINE

Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Status

Active

$13.72 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSCT1000N170
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1700 V
Rds On (Max)1.3Ohm @ 3A, 20V
Vgs(th) (Max)3.5V @ 1mA
Gate Charge (Qg)13.3 nC @ 20 V
Input Capacitance (Ciss)133 pF @ 1000 V
Power Dissipation (Max)96W (Tc)
Drive Voltage20V
Supplier Device PackageHiP247™
RoHSRoHS
Part StatusActive

Application & Notes

SCT1000N170 by STMicroelectronics is an N-channel power MOSFET rated at 1700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.3Ohm @ 3A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)+22V, -10V
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs(th) (Max) @ Id3.5V @ 1mA
Rds On (Max) @ Id, Vgs1.3Ohm @ 3A, 20V
Power Dissipation (Max)96W (Tc)
Gate Charge (Qg) (Max) @ Vgs13.3 nC @ 20 V
Drain to Source Voltage (Vdss)1700 V
Input Capacitance (Ciss) (Max) @ Vds133 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C7A (Tc)

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