RV2C014BCT2CL
MOSFET P-CH 20V 700MA DFN1006-3
Transistors Fets Mosfets Single
3-XFDFN
Active
$0.51 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RV2C014BCT2CL |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 300mOhm @ 1.4A, 4.5V |
| Vgs(th) (Max) | 1V @ 100µA |
| Input Capacitance (Ciss) | 100 pF @ 10 V |
| Power Dissipation (Max) | 400mW (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | DFN1006-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RV2C014BCT2CL by Rohm Semiconductor is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 1.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RV2C014BCT2CL
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.4A, 4.5V |
| Power Dissipation (Max) | 400mW (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
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