PMZB1200UPEYL
NEXPERIA PMZB1200U - 30V, P-CHAN
Transistors Fets Mosfets Single
3-XFDFN
Active
$0.04 / unit (market reference)
MOQ: 7797 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PMZB1200UPEYL |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 1.4Ohm @ 410mA, 4.5V |
| Vgs(th) (Max) | 950mV @ 250µA |
| Gate Charge (Qg) | 1.2 nC @ 4.5 V |
| Input Capacitance (Ciss) | 43.2 pF @ 15 V |
| Power Dissipation (Max) | 310mW (Ta), 1.67W (Tc) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | DFN1006B-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMZB1200UPEYL by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 410mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMZB1200UPEYL
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 410mA, 4.5V |
| Power Dissipation (Max) | 310mW (Ta), 1.67W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 1.2 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43.2 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 410mA (Ta) |
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