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Rohm SemiconductorTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

RSJ650N10TL

MOSFET N-CH 100V 65A LPTS

RSJ650N10TL by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

Datasheet

View Datasheet ↗

$6.41 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelRSJ650N10TL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)9.1mOhm @ 32.5A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)260 nC @ 10 V
Input Capacitance (Ciss)10780 pF @ 25 V
Power Dissipation (Max)100W (Tc)
Drive Voltage4V, 10V
Supplier Device PackageLPTS
RoHSRoHS
Part StatusActive

Application & Notes

RSJ650N10TL by Rohm Semiconductor is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.1mOhm @ 32.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for RSJ650N10TL

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs9.1mOhm @ 32.5A, 10V
Power Dissipation (Max)100W (Tc)
Gate Charge (Qg) (Max) @ Vgs260 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds10780 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C65A (Ta)

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