RGT8TM65DGC9
FIELD STOP TRENCH IGBT
Transistors Igbts Single
TO-220-3 Full Pack
Active
$0.98 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RGT8TM65DGC9 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 16 W |
| Supplier Device Package | TO-220NFM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RGT8TM65DGC9 by Rohm Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RGT8TM65DGC9
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 13.5 nC |
| Power - Max | 16 W |
| Test Condition | 400V, 4A, 50Ohm, 15V |
| Td (on/off) @ 25°C | 17ns/69ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Reverse Recovery Time (trr) | 40 ns |
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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