RF4E080BNTR
MOSFET N-CH 30V 8A HUML2020L8
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Transistors Fets Mosfets Single
8-PowerUDFN
Active
$0.67 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RF4E080BNTR |
| Package / Case | 8-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 17.6mOhm @ 8A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) | 660 pF @ 15 V |
| Power Dissipation (Max) | 2W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | HUML2020L8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RF4E080BNTR by Rohm Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17.6mOhm @ 8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RF4E080BNTR
Alternatives & Replacements
View All →DMG4468LFG-7
MOSFET N-CH 30V 7.62A 8DFN
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RF4E060AJTCR
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DMG4468LFG
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RF4E110GNTR
MOSFET N-CH 30V 11A HUML2020L8
RF4L055GNTCR
MOSFET N-CH 60V 5.5A HUML2020L8
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 17.6mOhm @ 8A, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
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