PC
Diodes Incorporated8-PowerUDFNRoHS

DMG4800LFG-7

MOSFET N-CH 30V 7.44A 8DFN

DMG4800LFG-7 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerUDFN

Status

Active

$0.51 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMG4800LFG-7
Package / Case8-PowerUDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)17mOhm @ 9A, 10V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)9.47 nC @ 5 V
Input Capacitance (Ciss)798 pF @ 10 V
Power Dissipation (Max)940mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageU-DFN3030-8
RoHSRoHS
Part StatusActive

Application & Notes

DMG4800LFG-7 by Diodes Incorporated is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs17mOhm @ 9A, 10V
Power Dissipation (Max)940mW (Ta)
Gate Charge (Qg) (Max) @ Vgs9.47 nC @ 5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds798 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.44A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.